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NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 365 VOLTS Features VCE(on) = 1.5 V Typ @ Ideal for Coil-on-Plug and Driver-on-Coil Applications IC = 10 A, VGE . 4.5 V Gate-Emitter ESD Protection C Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or G RG Microprocessor Devices Low Saturation Voltage RGE High Pulsed Current Capability Minimum Avalanche Energy - 500 m