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R6004JNJ Datasheet Nch 600V 4A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 1.43 ID 4A PD 60W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Embossed Tape Packing code TL Marking R6004JNJ Basic ordering unit (pcs) 1000 lAbsolute maximum ratings (Ta = 25 C ,unless otherwise specified) l Parameter Symbol Value Unit VDSS Drain - Source voltage 600 V Continuous drain current (Tc = 25 C) ID*1 4 A IDP*2 Pulsed drain current 12 A VGSS Gate - Source voltage 30 V IAS*3 Avalanche current, single pulse 1.0 A EAS*3 Avalanche energy, single pulse 52 mJ Power dissipation (Tc