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TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. G C E 1200V Field Stop Trench Gate Low VCE(on) Easy Paralleling C G E Applications Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Parameter Symbol APT15GN120BDQ1(G) UNIT VCES Collector-Emitter Voltage 1200 Volts VGE Gate-Emitter Voltage