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TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.GCE 1200V Field Stop Trench Gate: Low VCE(on) Easy Paralleling CGEApplications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. ParameterSymbol APT15GN120BDQ1(G) UNITVCES Collector-Emitter Voltage1200VoltsVGEGate-Emitter Voltage

 

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 apt15gn120bdq1g.pdf Проектирование, MOSFET, Мощность

 apt15gn120bdq1g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 apt15gn120bdq1g.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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