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FTS01N15G 150V N-Channel Enhancement Mode MOSFET General Features ESD improved capability BV R I DSX DS(ON) (Typ.) D High dense cell design for extremely low R . DS(ON) Rugged polysilicon gate cell structure 150V 0.45 1.3A RoHS compliant Halogen-free available SOT-223 D D Applications G Relay driver G High speed line driver D Logic level translator S S Ordering Information Part Number Package Marking Remark FTS01N15G SOT-223 01N15G Halogen Free Absolute Maximum Ratings TA =25 unless otherwise specified Symbol Parameter FTS01N15G Unit V Drain-to-Source Voltage[1] 150 V DSX V Drain-to-Gate Voltage[1] 150 V DGX I Continuous Drain Current 1.3 D A I Pulsed Drain Current[2] 5.2 DM Power Dissipation 1.5 W P D Derating Factor above 25 0.012 W/ V Gate-to-Source Voltage 2

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 fts01n15g.pdf Проектирование, MOSFET, Мощность

 fts01n15g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fts01n15g.pdf База данных, Инновации, ИМС, Транзисторы