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FTS10N15G 150V N-Channel Enhancement Mode MOSFET General Features ESD Improved Capability BV R I DSX DS(ON) (Typ.) D Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure 150V 5 0.35A Fast Switching Speed RoHS Compliant SOT-223 Halogen-free Available D D Applications G Relay Driver G High Speed Line Driver D Logic Level Translator S S Ordering Information Part Number Package Marking Remark FTS10N15G SOT-223 10N15G Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTS10N15G Unit V Drain-to-Source Voltage[1] 150 V DSX V Drain-to-Gate Voltage[1] 150 V DGX I Continuous Drain Current 0.35 D A I Pulsed Drain Current[2] 1.4 DM Power Dissipation 1.5 W P D Derating Factor above 25 0.012 W/ V Gate-to-Sour

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 fts10n15g.pdf Проектирование, MOSFET, Мощность

 fts10n15g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fts10n15g.pdf База данных, Инновации, ИМС, Транзисторы