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FTX30P35G 350V P-Channel Enhancement Mode MOSFET General Features Proprietary Advanced Planar Technology BVDSS RDS(ON) (Max.) ID Rugged Polysilicon Gate Cell Structure Fast Switching Speed -350V 30 -200mA RoHS Compliant Halogen-free available SOT-89 D Applications Drain High Efficiency SMPS G Gate Adaptor/Charger Drain Active PFC Source S Ordering Information Part Number Package Marking Remark FTX30P35G SOT-89 P35 Halogen Free Absolute Maximum Ratings TA=25 unless otherwise specified Symbol Parameter FTX30P35G Unit VDSS Drain-to-Source Voltage[1] -350 V ID Continuous Drain Current -0.2 A IDM Pulsed Drain Current[2] -0.6 PD Power Dissipation 1.0 W VGS Gate-to-Source Voltage 20 V Soldering Temperature TL 300 Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Stor

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 ftx30p35g.pdf Проектирование, MOSFET, Мощность

 ftx30p35g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ftx30p35g.pdf База данных, Инновации, ИМС, Транзисторы