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FTZ15N35G 350V N-Channel MOSFET General Features ESD improved Capability BV R (Max.) I DSX DS(ON) D Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure 15 350V 200mA Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available D Applications Drain High Efficiency SMPS Source Adaptor/Charger G Active PFC Gate S Ordering Information Part Number Package Marking Remark FTZ15N35G SOT-23 N35 Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTZ15N35G Unit V Drain-to-Source Voltage[1] 350 V DSX V Drain-to-Gate Voltage[1] 350 V DGX I Continuous Drain Current 0.2 D A I Pulsed Drain Current[2] 0.6 DM P Power Dissipation 0.50 W D V Gate-to-Source Voltage 20 V GS Gate Source ESD V 200 V ESD(G-S) IEC, C=150pF, R=3

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 ftz15n35g.pdf Проектирование, MOSFET, Мощность

 ftz15n35g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ftz15n35g.pdf База данных, Инновации, ИМС, Транзисторы