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FTZ20N01G5 20V N-Channel Enhancement Mode MOSFET General Features Proprietary Advanced Planar Technology BVDSS R (Typ.) I DS(ON) D Rugged Polysilicon Gate Cell Structure Fast Switching Speed 20V 1.55 500mA RoHS Compliant Halogen-free Available Applications SOT-23 High Efficiency SMPS Adaptor/Charger Drain Source Active PFC Gate Ordering Information Part Number Package Marking Remark FTZ20N01G5 SOT-23 N01 Halogen Free Absolute Maximum Ratings TA=25 unless otherwise specified Symbol Parameter FTZ20N01G5 Unit VDSS Drain-to-Source Voltage[1] 20 V I Continuous Drain Current 0.5 D A IDM Pulsed Drain Current[2] 2 P Power Dissipation 0.5 W D VGS Gate-to-Source Voltage 20 V Soldering Temperature T 300 L Distance of 1.6mm from case for 10 seconds T and T Operating and Storage Tempera

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 ftz20n01g5.pdf Проектирование, MOSFET, Мощность

 ftz20n01g5.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ftz20n01g5.pdf База данных, Инновации, ИМС, Транзисторы