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FTZ30P35G 350V P-Channel MOSFET General Features ESD improved Capability BV R (Max.) I DSX DS(ON) D Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure 30 -350V -200mA Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available D Applications Drain High Efficiency SMPS Source Adaptor/Charger G Active PFC Gate S Ordering Information Part Number Package Marking Remark FTZ30P35G SOT-23 P35 Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTZ30P35G Unit V Drain-to-Source Voltage[1] -350 V DSX V Drain-to-Gate Voltage[1] -350 V DGX I Continuous Drain Current -0.2 D A I Pulsed Drain Current[2] -0.6 DM P Power Dissipation 0.50 W D V Gate-to-Source Voltage 20 V GS Gate Source ESD V 350 V ESD(G-S) IEC,

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 ftz30p35g.pdf Проектирование, MOSFET, Мощность

 ftz30p35g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ftz30p35g.pdf База данных, Инновации, ИМС, Транзисторы