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BL13N50 Power MOSFET 1 Description BL13N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500 V DS@Tj.max I 13 A D R 0.37 DS(ON).Typ Qg. 35 nC Typ FEATURES Fast Switching Low Crss (typical 12pF ) 100% avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High frequency switching mode power supply Electronic ballast ORDERING INFORMATION Ordering Codes Package Product Code Packing BL13N50-P TO-220 Tube BL13N50 BL13N50-A TO-220F Tube BL13N50-A XXXX Product Code (2) Package type (1) Chip name XXX

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 bl13n50.pdf Проектирование, MOSFET, Мощность

 bl13n50.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bl13n50.pdf База данных, Инновации, ИМС, Транзисторы