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2N7002KW N-Channel MOSFET Pin Configurations Features V = 60V DS I D = 0.3A R @V = 10V, Max =2.3 DS(ON) GS R @V = 4.5V, Max =3 DS(ON) GS General Description Super High dense cell design for extremely low RDS(ON) Reliable and Rugged. SOT-323 for Surface Mount Package. ESD Rating >2000VHBM SOT-323 Absolute Maximum Ratings @T =25 unless otherwise noted A parameter symbol limit unit Drain-source voltage V 60 V DS Gate-source voltage V 20 V GS T =25 C 0.30 C T =70 C 0.26 C Continuous Drain Current (T = 150 C) I J D T =25 C 0.34b,c A T =70 C 0.27b,c A A T =25 C 0.43 C Continuous Source-Drain Diode Current I S T =25 C 0.25b,c A Pulsed Drain Current (t = 300 s) I 0.65 DM T =25 C 0.51 C Maximum power dissipation P W D T =70 C 0.33 C T =25 C 0.30b,c A T =70 C 0.20b,c A Operating Juncti

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