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AO3400 N-Channel MOSFET Features Pin Configurations V = 30V DS I D = 5A R @V = 10V, TYP =35m DS(ON) GS R @V = 4.5V, TYP =40m DS(ON) GS General Description Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Characteristic Symbol Max Unit Drain-Source Voltage BV 30 V DSS Gate- Source Voltage V +12 V GS Drain Current (continuous) 5 A I D Drain Current (pulsed) I 18 A DM Total Device Dissipation PD 1400 mW TA=25 Junction T 150 J Storage Temperature T -55to+150 stg Revision 2018 1 / 5 www.born-tw.com AO3400 Electrical Characteristics @T =25 unless otherwise noted A Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS 30 V (I = 250uA,V

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 ao3400.pdf Проектирование, MOSFET, Мощность

 ao3400.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ao3400.pdf База данных, Инновации, ИМС, Транзисторы