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AO3401F P-Channel MOSFET Features Pin Configurations V = -30V DS I D = -3 A R @V = -10V, Typ =65m DS(ON) GS R @V = -4.5V, Typ=75m DS(ON) GS General Description Advanced tr ench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Characteristic Symbol Max Unit -30 Drain-Source Voltage BV V DSS Gate- Source Voltage 12 V V GS Drain Current (continuous) I -3.0 A D Drain Current (pulsed) I A DM -12 Total Device Dissipation PD 1200 mW Junction T 150 J Storage Temperature T -55to+150 stg Revision 2018 1 / 5 www.born-tw.com AO3401F Electrical Characteristics @T =25 unless otherwise noted A Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -30 V (I = -

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 ao3401f.pdf Проектирование, MOSFET, Мощность

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