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AO3407 P-Channel MOSFET Features Pin Configurations V = -30V DS I D = -4.1A R @V = -10V, TYP =55m DS(ON) GS R @V = -4.5V, TYP =75m DS(ON) GS General Description Advanced tr ench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Characteristic Symbol Max Unit -30 Drain-Source Voltage BV V DSS Gate- Source Voltage V V GS +20 Drain Current (continuous) I -4.1 A D Drain Current (pulsed) I A DM -16 Total Device Dissipation PD 1400 mW TA=25 Junction T 150 J Storage Temperature T -55to+150 stg Revision 2018 1 / 4 www.born-tw.com AO3407 Electrical Characteristics @T =25 unless otherwise noted A Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -30 ... ещё ⇒

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 ao3407.pdf Проектирование, MOSFET, Мощность

 ao3407.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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