Скачать даташит для ao3415e:

AO3415E P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -4.8A R @V = -4.5V, TYP =45m DS(ON) GS R @V = -2.5V, TYP =65m DS(ON) GS General Description Load Switch Switching circuits High-speed line driver HMB ESD Protection 2KV SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Otherwise Noted) VGS Gate-Source Voltage 8 V -20 V V(BR)DSS Drain-Source Breakdown Voltage TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -50 to 150 C Mounted on Large Heat Sink =25 C IDM TA Pulse Drain Current Tested -30 A =25 C TA -4.8 ID Continuous Drain Current A =70 C TA -3.6 =25 C TA 1.5 PD Maximum Power Dissipation W =70 C TA 1.0 R JA Thermal Resistance Junction-Am

Ключевые слова - ALL TRANSISTORS DATASHEET

 ao3415e.pdf Проектирование, MOSFET, Мощность

 ao3415e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ao3415e.pdf База данных, Инновации, ИМС, Транзисторы