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BM3134KE N-Channel MOSFET Features Pin Configurations V = 20V DS I D = 0.75A R @V = 4.5V, Max =380m DS(ON) GS R @V = 2.5V, Max =450m DS(ON) GS R @V = 1.8V, Max =800m DS(ON) GS General Description Lead Free Product is Acquired Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-723 for Surface Mount Package. Application Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics Logic Level Shift Absolute Maximum Ratings @T =25 unless otherwise noted A Symbol Value Parameter Unit Drain-Source Voltage VDS 20 V Typical Gate-Source Voltage VGS 12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current (tp=10 s) IDM 1.8 A Power Dissipation (note 1) PD 350 mW Thermal Resistance from Junction to Ambie

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 bm3134ke.pdf Проектирование, MOSFET, Мощность

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