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BM8205 20V Dual N-Channel Enhancement MOSFET Features Pin Configurations V = 20V DS I D = 4A R @V = 4.5V, TYP =22m DS(ON) GS R @V = 2.5V, TYP =28m DS(ON) GS General Description Very low on-resistance RDS(ON) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current SOT23-6L for Surface Mount Package. APPLICATION Power switching application PWM applications SOT23-6L Hard switched and high frequency circuits Uninterruptible power supply Absolute Maximum Ratings @T =25 unless otherwise noted A parameter symbol limit unit Drain-source voltage V 20 V DS Gate-source voltage V 12 V GS T =25 4.0 C A Continuous drain current (T = 150 I C) a J D T =70 3.0 C A A Pulsed drain current b I 20 DM Continuous source current (diode conduction) a I 1

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 bm8205.pdf Проектирование, MOSFET, Мощность

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