Скачать даташит для bmdfn2302:

BMDFN2302 N-Channel MOSFET Features Pin Configurations V = 20V DS I D = 0.71A D R @V = 4.5V, TYP =220m DS(ON) GS R @V = 2.5V, TYP =260m DS(ON) GS R @V = 1.8V, TYP =315m DS(ON) GS G S General Description Trench Technology G S Supper high density cell design D Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN1006-3L Small Signal Switching DFN1006-3L Small Moto Driver Absolute Maximum Ratings Parameter Symbol 10 S Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 5 T =25 C 0.71 0.66 A Continuous Drain Current a d I A D T =70 C 0.57 0.52 A T =25 C 0.32 0.27 A Maximum Power Dissipation a d P W D T =70 C 0.20 0.17 A T =25 C 0.67 0.62 A Continuous Drain Current b d I A D T =70 C 0.54 0.50 A T =25 C 0

Ключевые слова - ALL TRANSISTORS DATASHEET

 bmdfn2302.pdf Проектирование, MOSFET, Мощность

 bmdfn2302.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bmdfn2302.pdf База данных, Инновации, ИМС, Транзисторы