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BMS2301 P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -1.4A R @V = -4.5V, Max =100m DS(ON) GS R @V = -2.5V, Max =140m DS(ON) GS R @V = -1.8V, Max =210m DS(ON) GS General Description Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-323 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Value Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage VGS 8.0 Continuous Drain Current I -1.4 D A Pulsed Drain Current (tp=10 s) I -3.0 DM Power Dissipation P 0.29 W D Thermal Resistance from Junction to R 431 /W JA Ambient Junction Temperature T 150 J Storage Temperature T stg -50 +150 Revision 2018 1 / 3 www.born-tw.com BMS2301 Electrical Characteristics @T =25 unless o

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