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BMSN3139 P-Channel Enhancement mode MOSFET Features Pin Configurations V = -20V DS I D = -2A R @V = -4.5V, Max =135m DS(ON) GS R @V = -2.5V, Max =190m DS(ON) GS General Description Advanced tr ench process technology High Density Cell Design For Ultra Low On-Resistance SOT-323 for Surface Mount Package. Applicatin PWM applications Load Switch P ower Management Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Value Unit V Drain-Source Voltage DS -20 V VGS Gate-Source Voltage 12 V I Continuous Drain Current D -2.0 A IDM Pulsed Drain Current (note1) -10 A P (Ta=25 ) D Power Dissipation 0.3 W /mW Thermal Resistance Junction to Ambient(note2) R 417 JA Junction Temperature Tj 150 -55 150 Storage Temperature Tstg Revision 2018 1 / 3 w

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 bmsn3139.pdf Проектирование, MOSFET, Мощность

 bmsn3139.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bmsn3139.pdf База данных, Инновации, ИМС, Транзисторы