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BSS84 P-Channel MOSFET Features Pin Configurations V = -50V DS I D = -0.13A R @V = -10V, TYP =2 DS(ON) GS R @V = -4.5V, TYP =2.5 DS(ON) GS General Description Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Symbol Parameter Value Unit V Drain-Source Voltage -50 V DS V Gate-Source Voltage 20 V GS I Continuous Drain Current -0.13 A D I Pulsed Drain Current (tp=10s) -0.5 A DM P Power Dissipation 350 mW D R Thermal Resistance From Junction To Ambient (t 5s) 350 JA /W Operation Junction And Storage Temperature Range -55 +150 T ,T J stg Revision 2018 1 / 4 www.born-tw.com BSS84 Electrical Characteristics @T =25 unless otherwise noted A Symbol Parameter Test conditi

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