Скачать даташит для irlml6401:

IRLML6401 P-Channel MOSFET Features Pin Configurations V = -12V DS I D = -4.3A R @V = -4.5V, MAX =50m DS(ON) GS R @V = -2.5V, MAX =85m DS(ON) GS General Description Fast switching High Density Cell Design For Ultra Low On-Resistance SOT-23-3L for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 ID Continuous Drain Current VGS=4.5V @ TA=25 -4.3 A Pulsed Drain Current IDM -13 Power Dissipation @ TA=25 1.3 W PD Thermal Resistance.Junction- to-Ambient RthJA 100 /W Linera Derating Factor 0.01 W/ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 Revision 2018 1 / 5 www.born-tw.com IRLML6401 Electrical Characteristics @T =25 unless otherwis

Ключевые слова - ALL TRANSISTORS DATASHEET

 irlml6401.pdf Проектирование, MOSFET, Мощность

 irlml6401.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irlml6401.pdf База данных, Инновации, ИМС, Транзисторы