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IRLML6402 P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -3.7A R @V = -4.5V, TYP =50m DS(ON) GS R @V = -2.5V, TYP =80m DS(ON) GS General Description Advanced tr ench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Characteristic Symbol Max Unit Drain-Source Voltage BV -20 V DSS Gate- Source Voltage V +12 V GS Drain Current (continuous) I -3.7 A D Drain Current (pulsed) I -15 A DM Total Device Dissipation PD 1100 mW TA=25 Junction T 150 J Storage Temperature T -55to+150 stg Revision 2018 1 / 5 www.born-tw.com IRLML6402 Electrical Characteristics @T =25 unless otherwise noted A Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -20

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