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SI2301F P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -2.2A R @V = -4.5V, Typ =95m DS(ON) GS R @V = -2.5V, Typ =130m DS(ON) GS General Description Advanced trench process technology High power and current handing capability Lead free product is acquired SOT-23 for Surface Mount Package. Application PWM applications Load switch Absolute Maximum Ratings @T =25 unless otherwise noted A parameter symbol limit unit Drain-source voltage V -20 V DS Gate-source voltage V 12 V GS T =25 -2.2 C C T =70 -1.5 C C Continuous Drain Current (TJ = 150 I C) D T =25 -2.2b,c C A T =70 -1.4b,c A C A T =25 -1.5 C C Continuous Source-Drain Diode Current I S T =25 -1b,c C A Pulsed Drain Current (t = 300 s) I -8 DM T =25 1.7 C C Maximum power dissipation P

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 si2301f.pdf Проектирование, MOSFET, Мощность

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