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SI2309S P-Channel MOSFET Features Pin Configurations V = -60V DS I D = -1.9A R @V = -10V, TYP =170m DS(ON) GS R @V = -4.5V, TYP =200m DS(ON) GS General Description Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23-3L for Surface Mount Package. Applications Load Switch Switching Circuits High Speed line Driver Absolute Maximum Ratings @T =25 unless otherwise noted A Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Otherwise Noted) -60 V V(BR)DSS Drain-Source Breakdown Voltage VGS Gate-Source Voltage 20 V TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -50 to 150 C Mounted on Large Heat Sink =25 C IDM TA Pulse Drain Current Tested -7.6 A =25 C TA -1.9 ID Continuous Drain Current A =70 C TA -1.5 =2

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