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MS23N06A N-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS23N06A is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Package Dimension Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Typical Applications Battery Protection Load Switch Hand-held Instrument Package type SOT-23 Millimeter Millimeter REF. REF. Min. Max. Min. Max. Packing & Order Information A 2.70 3.10 G 1.90 Ref. B 2.30 3.00 H 0.90 1.30 3,000/Reel C 1.20 1.75 I 0.05 0.21 D 0.30 0.50 J 0.58 Ref. E 0.01 0.15 L 0.95 Typ. F 0 10

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 ms23n06a.pdf Проектирование, MOSFET, Мощность

 ms23n06a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ms23n06a.pdf База данных, Инновации, ИМС, Транзисторы