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MSB100N023 N-Channel 100-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features l R =2.5m @ V =10V DS(ON) GS l Fast switching Package Dimension l Improve dv/dt Capability l 100% EAS Guaranteed l Green Device Available Typical Applications l Networking l Load Switch l Synchronous Rectifier l BMS Applications Millimeter Millimeter Package type TO-263 REF. REF. Min. Max. Min. Max. A 4.37 4.77 E 9.80 10.36 A1 0.00 0.25 E1 7.06 - A2 2.20 2.80 e 2.54 BSC Packing & Order Information b 0.70 0.96 H 14.70 15.70 800/Reel b2 1.17 1

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 msb100n023.pdf Проектирование, MOSFET, Мощность

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