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MSH30P100 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize RDS(ON), provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features Package Dimension RDS(ON) =3.3m @ VGS =-10V Fast switching Suit for -4.5V Gate Drive Applications 100% EAS Guaranteed Green Device Available Typical Applications Motor Driver Applications POL Applications Load Switch LED Applications Millimeter Millimeter REF. REF. Package type PDFN 5X6 Min. Nom. Max. Min. Nom. Max. A 0.85 1.00 1

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 msh30p100.pdf Проектирование, MOSFET, Мощность

 msh30p100.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 msh30p100.pdf База данных, Инновации, ИМС, Транзисторы