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MSHM40N085 N-Channel 40-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Package Dimension Features R =8.5m @ V =10V DS(ON) GS Super Low Gate Charge 100% EAS Guaranteed Green Device Available Typical Applications Motor Control DC/DC Converter Millimeter Millimeter Synchronous rectifier applications REF. REF. Min. Nom. Max. Min. Nom. Max. A 0.70 0.75 0.80 E1 3.00 3.15 3.20 b 0.25 0.30 0.

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 mshm40n085.pdf Проектирование, MOSFET, Мощность

 mshm40n085.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mshm40n085.pdf База данных, Инновации, ИМС, Транзисторы