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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N930 2N930A UNIT VCEO Collector Emitter Voltage 45 60 V VCBO Collector Base Voltage 45 60 V VEBO Emitter Base Voltage 5 6 V IC Collector Current Continuous 30 mA Power Dissipation @ Ta=25 C PD 300 mW Derate Above 25 C 1.72 mW/ C Power Dissipation @ Tc=25 C PD 600 mW Derate Above 25 C 3.42 mW/ C Operating And Storage Junction Tj, Tstg - 65 to +200 C Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) 583 C/W Junction to Case Rth (j-c) 292 C/W ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N930 2N930A UNIT *VCEO IC=10mA, IB=0 Collector