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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS 2N9302N930ATO-18Metal Can PackageLow Noise TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N930 2N930A UNITVCEOCollector Emitter Voltage 45 60 VVCBOCollector Base Voltage 45 60 VVEBOEmitter Base Voltage 5 6 VICCollector Current Continuous 30 mAPower Dissipation @ Ta=25C PD 300 mWDerate Above 25C 1.72 mW/ CPower Dissipation @ Tc=25C PD 600 mWDerate Above 25C 3.42 mW/ COperating And Storage Junction Tj, Tstg - 65 to +200 CTemperature RangeTHERMAL CHARACTERISTICSJunction to Ambient in free air Rth (j-a)583 C/WJunction to Case Rth (j-c)292 C/WELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION 2N930 2N930A UNIT*VCEO IC=10mA, IB=0Collector

 

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 2n930 a.pdf Проектирование, MOSFET, Мощность

 2n930 a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n930 a.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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