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DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 800 mA Power Dissipation PD 400 mW Power Dissipation (TC=25 C) PD 1.2 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance JA 438 C/W Thermal Resistance JC 146 C/W ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) 2N2221A 2N2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V 10 10 nA ICBO VCB=60V, TA=150 C 10 10 A IEBO VEB=3.0V 10 10 nA ICEV VCE=60V, VEB=3.0V 10 10 nA