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DATA SHEET2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6.0 VCollector Current IC 800 mA Power Dissipation PD 400 mWPower Dissipation (TC=25C) PD 1.2 WOperating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance JA 438 C/WThermal Resistance JC 146 C/WELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) 2N2221A 2N2222ASYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V 10 10 nA ICBO VCB=60V, TA=150C 10 10 A IEBO VEB=3.0V 10 10 nA ICEV VCE=60V, VEB=3.0V 10 10 nA