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CEC3257 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES D -30V, -17A, RDS(ON) = 25mW @VGS = -10V. RDS(ON) = 32mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). G High power and current handing capability. RoHS compliant. S D2 D2 D1 D1 G2 S2 G1 S1 DFN3*3 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous RqJc = 25 C -17 A RqJc = 100 C -11 A ID RqJA = 25 C -8 A RqJA= 100 C -5 A Drain Current-Pulsed a RqJc = 25 C -68 A IDM RqJA = 25 C -32 A RqJc = 25 C 12.5 W Maximum Power Dissipation PD 2.5 RqJA = 25 C W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case b RqJc 10 C/W Thermal Resistance,... ещё ⇒

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 cec3257.pdf Проектирование, MOSFET, Мощность

 cec3257.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cec3257.pdf База данных, Инновации, ИМС, Транзисторы