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CEM3115 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -12A, RDS(ON) = 12m @VGS = -10V. RDS(ON) = 16m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous@TA = 25 C -12 A ID @TA = 70 C -9.1 A Drain Current-Pulsed a IDM -48 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 50 C/W Rev 2. 2016.Sep Specification and data are subject to change without notice . http //www.cet-mos.... ещё ⇒

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 cem3115.pdf Проектирование, MOSFET, Мощность

 cem3115.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cem3115.pdf База данных, Инновации, ИМС, Транзисторы