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CEP100N10L/CEB100N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 92A, RDS(ON) = 8.2m @VGS = 10V. RDS(ON) = 10.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous @ TC = 25 C 92 A ID Drain Current-Continuous @ TC = 100 C 65 A Drain Current-Pulsed a IDM 368 A Maximum Power Dissipation @ TC = 25 C 125 W PD - Derate above 25 C 0.83 W/ C Single Pulsed Avalanche Energy d EAS 80 mJ IAS 40 A Single Pulsed Avalanche Current d TJ,Tstg Operating and Store Temperature Range -55 to 175 C Thermal Characteristics Par... ещё ⇒

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 cep100n10l ceb100n10l.pdf Проектирование, MOSFET, Мощность

 cep100n10l ceb100n10l.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cep100n10l ceb100n10l.pdf База данных, Инновации, ИМС, Транзисторы