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CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85 10A 10V CEB10N65 650V 0.85 10A 10V CEF10N65 650V 0.85 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 10 10d A ID @ TC = 100 C 6 6d A Drain Current-Pulsed a IDM e 40 40 d A Maximum Power Dissipation @ TC = 25 C 200 60 W PD - Derate above 25 C 1.3 0.4 W/ C Single Pulsed Avalanche Energy h EAS 542 mJ IAS 8.5 A Single Pulsed Avalanche Curre