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CEP10N65/CEB10N65CEF10N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP10N65 650V 0.85 10A 10VCEB10N65 650V 0.85 10A 10VCEF10N65 650V 0.85 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 650 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 10 10d AID@ TC = 100 C 6 6d ADrain Current-Pulsed a IDM e 40 40 d AMaximum Power Dissipation @ TC = 25 C 200 60 WPD- Derate above 25 C 1.3 0.4 W/ CSingle Pulsed Avalanche Energy h EAS 542 mJIAS 8.5 ASingle Pulsed Avalanche Curre