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AGM412MAP General Description Product Summary The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 40V 10m 22A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGM412MAP AGM412MAP PDFN3.3*3.3 5000 330mm 12mm Table1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Va

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 agm412map.pdf Проектирование, MOSFET, Мощность

 agm412map.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 agm412map.pdf База данных, Инновации, ИМС, Транзисторы