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AGM412S General Description The AGM412S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 40V 11m 13A Advance high cell density Trench technology SOP-8 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGM412S AGM412S SOP8 3000 330mm 12mm Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Value Unit VDS Dra

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 agm412s.pdf Проектирование, MOSFET, Мощность

 agm412s.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 agm412s.pdf База данных, Инновации, ИМС, Транзисторы