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BPMS04N003M Bright Power Semiconductor 40V N-Channel Power MOSFET General Description Application The BPMS04N003M uses super trench technology that is Synchronous Rectification for Power Supply uniquely optimized to provide the most efficient high DC/DC Converters frequency switching performance. Both conduction and High-frequency switching switching power losses are minimized due to an extremely low combination of R and Q This device is ideal for high- DS(ON) g. frequency switching and synchronous rectification. The BPMS04N003M is available in DFN5*6 package. Features BV = 40V, I = 110A DSS D R = 2.4m @ V = 10V. DS(ON)_TYP GS R = 3.3m @ V = 4.5V DS(ON)_TYP GS Fast switching capability. Robust design with better EAS performance EMI Improved Design 100% UIS Tested Typical Application V

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 bpms04n003m.pdf Проектирование, MOSFET, Мощность

 bpms04n003m.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bpms04n003m.pdf База данных, Инновации, ИМС, Транзисторы