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Plastic-Encapsulate MOSFETS N-channel MOSFET SOT-363 ID V(BR)DSS RDS(on)MAX 6 5 5 @10V 4 60V 300mA 5.3 @4.5V 1 2 3 FEATURE APPLICATION z High density cell design for Low RDS on Load Switch for Portable Devices z Voltage controlled small signal switch DC/DC Converter z Rugged and reliable z High saturation current capability z ESD protected Equivalent Circuit MARKING 72K MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Unit Symbol Parameter Value VDS Drain-Source voltage 60 V VGS Gate-Source voltage 20 V ID Drain Current 300 mA PD Power Dissipation 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 R JA Thermal Resistance fromJunction to Ambient 833 /W MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min... ещё ⇒

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 2n7002kdw.pdf Проектирование, MOSFET, Мощность

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