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SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 3 1. GATE 2. SOURCE 1 2 3. DRAIN FEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Equivalent Circuit M MOSFET MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 60 V V S -Source Voltage 0 V ID Continuous Drain Current 340 mA IDM Pulsed Drain Current(note1) 800 mA PD Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 R JA Thermal Resistance from Junction t... ещё ⇒

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