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Plastic-Encapsulate MOSFETS SOT 523 N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits 1. GATE Easy to parallel 2. SOURCE 3. DRAIN Marking KN MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Equivalent circuit Units Symbol Parameter Value VDS Drain-Source voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 R JA Thermal Resistance from Junction to Ambient 625 /W MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10 A 30 V Zero Gate Voltage Drain Curren... ещё ⇒

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 2sk3018wt.pdf Проектирование, MOSFET, Мощность

 2sk3018wt.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sk3018wt.pdf База данных, Инновации, ИМС, Транзисторы