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Plastic-Encapsulate MOSFETS N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portableequipment 1.Gate 2.Source 3.Drain Easily designed drive circuits Package SOT-523 Plastic Easy to parallel Marking KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current 0.1 A R JA Thermal Resistance, Junction-to-Ambient 833 /W PD Power Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55 +150 MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10 A 30 V Zero Gate Voltage Drain... ещё ⇒

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 2sk3019wt.pdf Проектирование, MOSFET, Мощность

 2sk3019wt.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sk3019wt.pdf База данных, Инновации, ИМС, Транзисторы