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Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV Marking Code NA1 Maximum Ratings @T = 25 C unless otherwise specified A Characteristic Symbol Value Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage 6 V TA = 25 C Steady 0.63 Continuous Drain Current (Note 1) A I D State TA = 85 C 0.45 IDM Pulsed Drain Current 6 A Thermal Characteristics @T = 25 C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 1) P 0.28 W D R Thermal Resistance, Junction to Ambient JA 452 C/W TJ, -55 to Operating and Storage Temperature Range C TSTG +150 Notes 1. Device mounte... ещё ⇒

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 bc1012.pdf Проектирование, MOSFET, Мощность

 bc1012.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc1012.pdf База данных, Инновации, ИМС, Транзисторы