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Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET SOT 523 Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV 1. GATE 2. SOURCE 3. DRAIN Drain Marking Code NA1 Gate Gate Protection Source Diode EQUIVALENT CIRCUIT Maximum Ratings @TA = 25 C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 6 V Steady TA = 25 C 0.63 Continuous Drain Current (Note 1) ID A State 0.45 TA = 85 C Pulsed Drain Current IDM 6 A Thermal Characteristics @TA = 25 C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 0.28 W Thermal Resistance, Junction to Ambient 452 ... ещё ⇒

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 bc1012t.pdf Проектирование, MOSFET, Мощность

 bc1012t.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc1012t.pdf База данных, Инновации, ИМС, Транзисторы