Скачать даташит для bc1012w:

Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV Drain Gate Gate Protection Source Diode EQUIVALENT CIRCUIT Maximum Ratings @T = 25 C unless otherwise specified A Characteristic Symbol Value Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage 6 V Steady TA = 25 C 0.63 Continuous Drain Current (Note 1) I A D State 0.45 TA = 85 C IDM Pulsed Drain Current 6 A Thermal Characteristics @T = 25 C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 1) P 0.28 W D R JA Thermal Resistance, Junction to Ambient 452 C/W Operating and Storage Temperature Range TJ, TSTG -55 ... ещё ⇒

Ключевые слова - ALL TRANSISTORS DATASHEET

 bc1012w.pdf Проектирование, MOSFET, Мощность

 bc1012w.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc1012w.pdf База данных, Инновации, ИМС, Транзисторы