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Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET SOT-323 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS 3. DRAIN z Load Switch for Portable Devices z DC/DC Converter MARKING 2301 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 ID -2.1 Continuous Drain Current Pulsed Drain Current IDM -4.8 A Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t R 357 5s) JA /W Junction Temperature TJ 150 Storage Temperature Tstg -55 +150 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Dr... ещё ⇒

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 bc2301w.pdf Проектирование, MOSFET, Мощность

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